SKU:93800370752
InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1sp
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1spInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Sn doped Conducting type: S C N Polish: one side polished Resistivity: (2. 82 2. 99)x10^ 3 ohm. cm Mobility: 2170 2220 cmE2 V. S EPD: <5000 cmE2 Carrier Concerntration: (9. 62 9. 99) x10^17 cm^3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing
Orientation Flat SEMI
41 mm) Length 1000 mm (40"") Max
Hot Press (eg: MSK-131-HS8)
Ionic Conductivity
Irritating to eyes
for 50ml x 16 centrifuge tubes
adjustable
PROPERTY US VALUE METRIC VALUE Particle Size 0
Microporous Layer
The pressing dies are made of 316 stainless steel
65 kg (empty)
)): 109 - 1011
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